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	Microcavity semiconductor laser coupled to a waveguide
	RICHARD, FRED V.; HOLM, PAIGE M.
	2003-02-20
著作权人	MOTOROLA, INC.
专利号	US20030036217A1
国家	美国
文献子类	发明申请
其他题名	Microcavity semiconductor laser coupled to a waveguide
英文摘要	High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The foregoing is utilized for a microcavity semiconductor laser coupled to a waveguide.
公开日期	2003-02-20
申请日期	2001-11-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66228]
专题	半导体激光器专利数据库
作者单位	MOTOROLA, INC.
推荐引用方式 GB/T 7714	RICHARD, FRED V.,HOLM, PAIGE M.. Microcavity semiconductor laser coupled to a waveguide. US20030036217A1. 2003-02-20.

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