| Self-sustained pulsating laser diode | |
| OHYA, MASAKI; FUJII, HIROAKI; ENDO, KENJI | |
| 2001-11-22 | |
| 著作权人 | NEC ELECTRONICS CORPORATION |
| 专利号 | US20010043632A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Self-sustained pulsating laser diode |
| 英文摘要 | A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1x1017 cm-3 and no greater than 5x1017 cm-3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past. |
| 公开日期 | 2001-11-22 |
| 申请日期 | 2001-03-28 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66212]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | OHYA, MASAKI,FUJII, HIROAKI,ENDO, KENJI. Self-sustained pulsating laser diode. US20010043632A1. 2001-11-22. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论