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	Semiconductor laser device and method of making same
	KAGAWA, HITOSHI C/O MITSUBISHI DENKI K.K.; YAGI, TETSUYA C/O MITSUBISHI DENKI K.K.
	1990-10-10
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	EP0390995A2
国家	欧洲专利局
文献子类	发明申请
其他题名	Semiconductor laser device and method of making same
英文摘要	A semiconductor laser includes a groove (10) in a GaAs first current blocking layer (5), which extends to an AlxGa(1-x)As second clad layer (4) beneath the first blocking layer (5). The width of the groove (10) periodically changes between larger and smaller widths along the length of the resonator. Over the regions of the first current blocking layer (5) where the groove has the smaller width, a grating-shaped AlzGa(1-z)As second current blocking layer (6) is formed. An AlxGa(1-x)As third current blocking layer (7) is formed over the second current blocking layer (6) and the portions of the first current blocking layer (5) not covered by the second current blocking layer (6). The variation of the width of the groove (10) is provided by placing a wafer with the groove formed in the first current blocking layer (5) in a metal organic thermal decomposition crystal deposition apparatus and heating it, while causing hydrogen chloride to flow, or placing the wafer in a molecular beam epitaxial deposition apparatus and heating it while irradiating with an arsenic molecular beam, or by placing a liquid-phase epitaxial deposition apparatus and causing to pass over the wafer a melt which selectively melts the first current blocking layer (5) but not the second current blocking layer (6).
公开日期	1990-10-10
申请日期	1989-07-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66211]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KAGAWA, HITOSHI C/O MITSUBISHI DENKI K.K.,YAGI, TETSUYA C/O MITSUBISHI DENKI K.K.. Semiconductor laser device and method of making same. EP0390995A2. 1990-10-10.

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