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	Optical semiconductor integrated circuit device
	MORIMOTO MASAHIRO; SHIMA KATSUTO
	1984-01-31
著作权人	FUJITSU KK
专利号	JP1984018694A
国家	日本
文献子类	发明申请
其他题名	Optical semiconductor integrated circuit device
英文摘要	PURPOSE:To obtain the same characteristics and reliability as those of a single element, by forming a semiconductor light emitting element on one main surface of a semiconductor substrate, forming a semiconductor element on the other main surface, and attaching a heat sink on the side of the light emitting element. CONSTITUTION:Epitaxial layers 2-5 are formed on one main surface of an N type GaAs substrate A P type region 8 and a P side electrode 13 are provided thereon. Thus a main part including a laser active region is formed. Epitaxial layers 10 and 11 are formed on the other main surface of the substrate A part of each layer is selectively removed, and the substrate 1 is exposed. An electrode 16, wherein an N side electrode of the laser and a drain electrode of an FET are made to form a unitary body, is provided so as to make ohmic contact with the substrate 1 and the epitaxial layer 1 Other electrodes 17-21 are arranged on the layer 11, and a laser driving circuit including a plurality of FETs is formed. In the assembling process, the P side electrode 13 of the IC element is fused to a heat sink. In this constitution, since the heat sink is attached to a part which is closest to the active region of the laser, increase in temperature becomes small.
公开日期	1984-01-31
申请日期	1982-07-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66120]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	MORIMOTO MASAHIRO,SHIMA KATSUTO. Optical semiconductor integrated circuit device. JP1984018694A. 1984-01-31.

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