Distributed feedback semiconductor laser and manufacture thereof | |
MIHARA TAKASHI | |
1990-10-15 | |
著作权人 | OLYMPUS OPTICAL CO LTD |
专利号 | JP1990254778A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Distributed feedback semiconductor laser and manufacture thereof |
英文摘要 | PURPOSE:To obtain laser rays excellent in quality with a low power consumption without any mode separation and mode hopping by a method wherein many active layers formed in fine lines are arranged at a prescribed interval. CONSTITUTION:Active layers of quantum well structure are arranged on a clad layer, where the active layers are constituted in such a manner that many active layers 2-1, 2-2,... formed in fine lines whose widths are smaller than the de Broglie wavelength of electrons are arranged at a prescribed, accurate interval to serve as quantum fine lines. An interval of A at which the fine line active layers 2-1, 2-2,... are arranged is set to be a length proportional to an integer multiple of a half of oscillation wavelength lambda. Therefore, the fine line active layers 2-1, 2-2,... function as not only an active layer but also a tuner. By this setup, in a semiconductor laser of this design, a threshold current can be decreased by effectively trapping a current to realize a low power consumption, and a tuner for distributed feedback is concurrently formed, so that semiconductor laser rays of single wavelength excellent in quality without any mode separation and mode hopping can be obtained from a semiconductor laser of this design. |
公开日期 | 1990-10-15 |
申请日期 | 1989-03-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/66083] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | OLYMPUS OPTICAL CO LTD |
推荐引用方式 GB/T 7714 | MIHARA TAKASHI. Distributed feedback semiconductor laser and manufacture thereof. JP1990254778A. 1990-10-15. |
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