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	Bandgap engineering
	LAM, YEE, LOY; CHAN, YUEN, CHUEN
	2004-11-04
著作权人	DENSELIGHT SEMICONDUCTORS PTE LTD
专利号	WO2004095662A2
国家	世界知识产权组织
文献子类	发明申请
其他题名	Bandgap engineering
英文摘要	A method for achieving large localized bandgap energy differences at the wafer-level scale, with fine bandgap control, through a combination of regrowth and quantum well intermixing processes. The technique allows fabrication of a photonic integrated circuit on a wafer, wherein epitaxial layers of different composition are formed on separate regions to optimise the associated energy bandgap at a different centre wavelength. Quantum well intermixing of those parts of the structure containing quantum wells allows localised fine tuning of the bandgap, either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap to achieve a certain functionality such as greater transparency or responsivity.
公开日期	2004-11-04
申请日期	2004-04-23
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65990]
专题	半导体激光器专利数据库
作者单位	DENSELIGHT SEMICONDUCTORS PTE LTD
推荐引用方式 GB/T 7714	LAM, YEE, LOY,CHAN, YUEN, CHUEN. Bandgap engineering. WO2004095662A2. 2004-11-04.

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