| A laser diode with a low absorption diode junction | |
| UNGAR, JEFFREY, E. | |
| 2003-09-18 | |
| 著作权人 | QUINTESSENCE PHOTONICS CORPORATION |
| 专利号 | WO2003077380A2 |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | A laser diode with a low absorption diode junction |
| 英文摘要 | A laser diode that has a plurality of semiconductor epitaxial layers grown on a substrate (30). The diode includes a light generating layer (34) located between two layers of n-type material (32 and 34). A thin layer of p-type material (36 and 38) is interposed between the active layer (34) and an n-type layer (40 and 42). The Diode includes a layer of n-doped material (32) located adjacent to a substrate (30). The laser diode further includes a contact (44). The contact (44) is biased so as to induce a recombination of holes and electrons in the active region (34) and generate light. |
| 公开日期 | 2003-09-18 |
| 申请日期 | 2003-03-04 |
| 状态 | 未确认 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65989]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | QUINTESSENCE PHOTONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | UNGAR, JEFFREY, E.. A laser diode with a low absorption diode junction. WO2003077380A2. 2003-09-18. |
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