QQ客服 官方微博 反馈留言

	Semiconductor optical waveguide element
	EHATA TOSHIKI; SASAYA YUKIHIRO; NISHIWAKI YOSHIKAZU; MATSUOKA HARUJI
	1982-11-02
著作权人	SUMITOMO DENKI KOGYO KK
专利号	JP1982178397A
国家	日本
文献子类	发明申请
其他题名	Semiconductor optical waveguide element
英文摘要	PURPOSE:To enable monolithic structure with every kind of semiconductor elements by forming plane multilayer structure formed by combining a high carrier concentration layer and a low carrier concentration layer, and a layer functioning as a waveguide layer. CONSTITUTION:Buffer layers 22 and waveguide layers 23 consists of N-AlY Ga1-YAs and N-AlXGa1-XAs of low carrier concentration (1-50X10cm), and substrates 24 in a figure a are obtained by growing N-AlZGa1-ZAs of high carrier concentration (1-50X10cm), to which Sn, Te, Se, Pb, etc. are doped, onto GaAs crystal substrates 25 of high carrier concentration in epitaxial shape. However, when Al concentration X, Y, Z(0<=X<1, 0
公开日期	1982-11-02
申请日期	1981-04-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65968]
专题	半导体激光器专利数据库
作者单位	SUMITOMO DENKI KOGYO KK
推荐引用方式 GB/T 7714	EHATA TOSHIKI,SASAYA YUKIHIRO,NISHIWAKI YOSHIKAZU,et al. Semiconductor optical waveguide element. JP1982178397A. 1982-11-02.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。