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	Phase locking array of semiconductor laser using Anti-guide with narrow interval
	DAN BOOTETSU; RUUKU JIEI MOOSUTO; TOOMASU JIEI ROSU; FUIRITSUPU DAGURASU HAYAHIDA; GEARII RII PEETAASON; YAROSURABUA JITSUTOKOBUA UIRUKOTSUKUSU
	1990-01-17
著作权人	ティアールダブリュー インコーポレーテッド
专利号	JP1990012886A
国家	日本
文献子类	发明申请
其他题名	Phase locking array of semiconductor laser using Anti-guide with narrow interval
英文摘要	PURPOSE: To obtain a device in which both strong mode confinement and strong bonding of element are satisfied by providing an inter-element region of high refractive index between waveguides thereby operating in a desired remote field distributed pattern with higher power without causing any burning at a spatial hole part. CONSTITUTION: The phase lock array comprises a substrate 10, an active semiconductor layer 20, electrodes for applying a voltage to the opposite sides of the active layer 20, means for causing a laser beam generating operation in a semiconductor structure having at least one emission face and a pair of refractive faces located at the opposite ends of the array structure, and a negative index waveguide 23 of limited interval formed in the array structure while having a parallel longitudinal axis. The array is provided with a semiconductor means between the waveguides 23 in order to provide an inter-element region having a high refractive index. Consequently, optical confinement between the waveguide elements 23 is relatively low and generation of a laser beam between the elements 23 is suppressed but bonding between the elements 23 is strong and a stabilized phase lock operation is ensured.
公开日期	1990-01-17
申请日期	1989-04-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65917]
专题	半导体激光器专利数据库
作者单位	ティアールダブリュー インコーポレーテッド
推荐引用方式 GB/T 7714	DAN BOOTETSU,RUUKU JIEI MOOSUTO,TOOMASU JIEI ROSU,et al. Phase locking array of semiconductor laser using Anti-guide with narrow interval. JP1990012886A. 1990-01-17.

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