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	Optical semiconductor device and process for producing the same
	SAKATA, YASUTAKA
	2004-08-12
著作权人	RENESAS ELECTRONICS CORPORATION
专利号	US20040156411A1
国家	美国
文献子类	发明申请
其他题名	Optical semiconductor device and process for producing the same
英文摘要	A resist is coated on a substrate. The resist is exposed to a pattern of a plurality of diffraction gratings for setting pitches corresponding respectively to oscillation wavelengths for the plurality of semiconductor lasers and for setting heights of the diffraction gratings which provide an identical coupling coefficient independently of the oscillation wavelengths. The coating is etched in such a manner that the level of etching per unit time is identical. A stripe mask is patterned according to the arrangement of the diffraction gratings. A laser active layer is formed on each of the diffraction gratings by selective MOVPE growth. An electrode is formed on each of the laser active layer on its top surface and the backside of the substrate. By virtue of this constitution, an optical semiconductor device and a process for producing the same can be realized which, when a plurality of semiconductor lasers are simultaneously formed on a single semiconductor substrate, can prevent a variation in coupling coefficient.
公开日期	2004-08-12
申请日期	2004-01-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65903]
专题	半导体激光器专利数据库
作者单位	RENESAS ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	SAKATA, YASUTAKA. Optical semiconductor device and process for producing the same. US20040156411A1. 2004-08-12.

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