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	Strain barrier quantum well semiconductor laser
	YAMADA HIROHITO
	1992-02-19
著作权人	NEC CORP
专利号	JP1992049688A
国家	日本
文献子类	发明申请
其他题名	Strain barrier quantum well semiconductor laser
英文摘要	PURPOSE:To achieve a uniform carrier injection operation and to obtain a quantum well laser whose modulation band is wide and whose oscillation spectrum width is narrow by a method wherein the lattice constant of a semiconductor forming a barrier layer is made smaller than the lattice constant of a substrate. CONSTITUTION:The manufacturing method is as follows: an n-InP buffer layer 14 is grown in 0.1mum on an n-InP substrate 15 by an MOVPE method; an In0.6 Ga0.4As0.6P0.4 barrier 12 composed of a composition whose lattice constant is by 0.5% smaller than that of InP is grown in 80 R; and an In0.53Ga0.47As well 13 is grown in 70Angstrom on it. The growth operation of the well and the barrier is repeated 10 times; and a 10-layer mutilple quantum well structure is manufactured. In addition, a p-InP clad layer 11 is grown in about 1mum on it. A multiple quantum well semiconductor wafer, having a strain barrier, which is manufactured in this manner is buried in a DC-PBH structure. Lastly, a p-side electrode and an n-side electrode are vapor-deposited.
公开日期	1992-02-19
申请日期	1990-06-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65885]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YAMADA HIROHITO. Strain barrier quantum well semiconductor laser. JP1992049688A. 1992-02-19.

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