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	Semiconductor device having heterostructure
	NISHIZAWA JUNICHI; SUDO KEN
	1990-12-25
著作权人	財団法人 半導体研究振興会
专利号	JP1990309303A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device having heterostructure
英文摘要	PURPOSE:To obtain the device having high transmittance and high efficiency by specifying the transverse size and waveform characteristics of a core formed of a GaP core layer and an AlxGa1-xP clad layer to prescribed values. CONSTITUTION:The 1st clad layer 2 consisting of the AlxGa1-xP (where, for example, x=0.095) is grown by a liquid phase growth method due to a temp. difference on a GaP substrate crystal 1 having a (100) face orientation. The GaP core layer 3 is then grown by applying an optimum phosphorus vapor pressure P onto a soln. to obtain the core layer 3 having less defects. This layer is then etched to a stripe shape having 50mum or smaller width by a reac tive on-etching method using a gaseous PCl3 discharge and further, a 2nd clad layer 4 consisting of the AlxGa1-xP is formed and a buffer layer 5 consisting of GaP is formed thereon by an ordinary wet etching. The loss of this optical waveguide is small as the absorption of the GaP itself is small. The device which is extremely small by the scattering and absorbing of the heterobounary of the GaP and the AlxGa1-xP and is small in the absorption loss from 600nm to 6mum wavelength, i.e. from visible to near IR regions is obtd.
公开日期	1990-12-25
申请日期	1989-05-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65854]
专题	半导体激光器专利数据库
作者单位	財団法人 半導体研究振興会
推荐引用方式 GB/T 7714	NISHIZAWA JUNICHI,SUDO KEN. Semiconductor device having heterostructure. JP1990309303A. 1990-12-25.

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