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	Strain quantum well semiconductor laser
	YAMADA HIROHITO
	1992-02-19
著作权人	日本電気株式会社
专利号	JP1992049689A
国家	日本
文献子类	发明申请
其他题名	Strain quantum well semiconductor laser
英文摘要	PURPOSE:To eliminate the overflow of electrons, to execute a uniform carrier injection operation and to obtain a strain quantum well laser whose gain spectrum is sharp and whose threshold value is low by a method wherein the lattice constant of a semiconductor forming a well layer is made larger than the lattice constant of a substrate. CONSTITUTION:A strain quantum well semiconductor laser where a semiconductor forming a well layer is composed of InXGa1-XAsYP1-Y or InAsZP1-Z and its lattice constant is larger than the lattice constant of a substrate is formed. X, Y and Z are set as 0<=X,Y, and Z<= Its manufacturing method is as follows: an n-InP buffer layer 14 is grown in 0.1mum on an n-InP substrate 15 by an MOVPE method; then, an InGaAsP barrier 12 is grown in 3mum; and an In0.8 Ga0.2As0.6P0.4 well 13 is grown in 40Angstrom on it. The growth operation of the well and the barrier is repeated five times; and a five-layer multiple quantum well structure is manufactured. In addition, a p-InP clad layer 11 is grown in about 11mum on it. A strain quantum well wafer manufactured in this manner is buried in a DC-PBH structure. Lastly, a p-side electrode and an n-side electrode are vapor-deposited.
公开日期	1992-02-19
申请日期	1990-06-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65847]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	YAMADA HIROHITO. Strain quantum well semiconductor laser. JP1992049689A. 1992-02-19.

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