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	Methods for fabricating integrated optoelectronic devices
	LIU, YUE
	2005-08-04
著作权人	FINISAR CORPORATION
专利号	US20050169569A1
国家	美国
文献子类	发明申请
其他题名	Methods for fabricating integrated optoelectronic devices
英文摘要	This disclosure concerns methods for fabrication of integrated high speed optoelectronic devices. In one example of such a method, a device region that includes a top surface and a bottom surface is formed on a top surface of a substrate. The device region may take the form of an optical emitter, such as a VCSEL, or a detector, such as a photodiode. Next, an isolation region is formed that is configured such that the device region is surrounded by the isolation region. A superstrate is then disposed on the top surface of the device region. Finally, a micro-optical device, such as a lens, is placed on a top surface of the superstrate.
公开日期	2005-08-04
申请日期	2004-12-22
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65508]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	LIU, YUE. Methods for fabricating integrated optoelectronic devices. US20050169569A1. 2005-08-04.

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