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	Mode selective semiconductor mirror for vertical cavity surface emitting lasers
	COX, JAMES A.; KIM, JIN K.; PARK, GYOUNGWON
	2006-03-02
著作权人	FINISAR CORPORATION
专利号	US20060045146A1
国家	美国
文献子类	发明申请
其他题名	Mode selective semiconductor mirror for vertical cavity surface emitting lasers
英文摘要	A vertical cavity surface emitting laser with a mode-selective mirror. A filter is formed on the top DBR stack of a VCSEL. The filter includes semiconductor layers that are etch stops for immediately superior layers. The filter is selectively etched to create a first region that is phase matched to the top DBR stack and a second region that is phase mismatched to the top DBR stack. The second region inhibits undesired modes and provides additional absorption for the undesired modes. The first region is formed using a wet-etch process whose etch depth is controlled because the semiconductor layers are etch stops for immediately superior layers.
公开日期	2006-03-02
申请日期	2005-07-07
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65174]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	COX, JAMES A.,KIM, JIN K.,PARK, GYOUNGWON. Mode selective semiconductor mirror for vertical cavity surface emitting lasers. US20060045146A1. 2006-03-02.

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