| VCSEL structure insensitive to mobile hydrogen | |
| JOHNSON, RALPH H. | |
| 2003-07-17 | |
| 著作权人 | FINISAR CORPORATION |
| 专利号 | US20030133483A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | VCSEL structure insensitive to mobile hydrogen |
| 英文摘要 | An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it. |
| 公开日期 | 2003-07-17 |
| 申请日期 | 2003-01-24 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65039]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | JOHNSON, RALPH H.. VCSEL structure insensitive to mobile hydrogen. US20030133483A1. 2003-07-17. |
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