Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits
LOTT, JAMES A.; LEDENTSOV, NIKOLAI; SHCHUKIN, VITALY
2013-05-16
著作权人CONNECTOR OPTICS LLC
专利号US20130122617A1
国家美国
文献子类发明申请
其他题名Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits
英文摘要Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.
公开日期2013-05-16
申请日期2012-10-09
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/64949]  
专题半导体激光器专利数据库
作者单位CONNECTOR OPTICS LLC
推荐引用方式
GB/T 7714
LOTT, JAMES A.,LEDENTSOV, NIKOLAI,SHCHUKIN, VITALY. Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits. US20130122617A1. 2013-05-16.
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