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	Semiconductor element and manufacture thereof
	SEKII HIROSHI; IMANAKA KOICHI
	1991-10-23
著作权人	OMRON CORP
专利号	JP1991237784A
国家	日本
文献子类	发明申请
其他题名	Semiconductor element and manufacture thereof
英文摘要	PURPOSE:To reduce the ohmic contact resistance between the uppermost layer of a semiconductor element and an electrode, by forming a PN junction current blocking layer composed of a first semiconductor layer of first conductivity type and a second semiconductor layer of second conductivity type, forming a current path region of second conductivity type from the second semiconductor layer to the first semiconductor layer in a part of the blocking layer, and forming an ohmic contact electrode on almost the whole upper surface of the second semiconductor layer. CONSTITUTION:On a substrate 10 the following are grown in order; a lower clad layer 11, a GaAs active layer 12, a P-AlGaAs upper clad layer 13, an N-AlGaAs layer 14, and a P-AlGaAs cap layer 15. In the central part above the cap layer 15, Zn is diffused down to the clad layer 13 so as to have a desired light emitting diameter, by using Zn diffusion in a quartz tube. A mask using AZ resist is formed only in the part above a P-Zn diffusion region 16; a P-side electrode 18 is vapor-deposited on the whole upper surface of the cap layer 15; the mask is eliminated by lift-off and the like; thus a window 18a for leading out light is formed in the P-side electrode 18. Hence the P-side electrode 18 comes into ohmic contact with the cap layer 15, on the whole surface except the window 18a.
公开日期	1991-10-23
申请日期	1990-02-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64938]
专题	半导体激光器专利数据库
作者单位	OMRON CORP
推荐引用方式 GB/T 7714	SEKII HIROSHI,IMANAKA KOICHI. Semiconductor element and manufacture thereof. JP1991237784A. 1991-10-23.

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