QQ客服 官方微博 反馈留言

	Algainp distributed reflection type semiconductor laser and manufacture thereof
	FUJII HIROAKI
	1988-11-10
著作权人	NEC CORP
专利号	JP1988273387A
国家	日本
文献子类	发明申请
其他题名	Algainp distributed reflection type semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To obtain a distributed reflection type laser having low optical coupling loss and high reliability by cladding (AlxGa1-x)yIn1-yP(xnot equal to 1) by (AlpGa1-p)qIn1-qP(pnot equal to 1) in a current injector, forming a predetermined diffraction grating on a clad layer on an active layer in a distributed reflector, and superposing a p-type Al0.5In0.5P layer on the top. CONSTITUTION:A double hetero structure and a cap layer 7 are superposed on a GaAs substrate 8 by an MOVPE method, only a current injector 14 is covered with a dielectric mask 13, a clad layer 3 on an active layer 1 of a distributed reflector 15 is etched to its interior, primary, secondary or tertiary diffraction grating is formed in the layer 3 by a 2 luminous flux interference exposure method, and the period of the grating is so selected as to feed back a light generated in the injector 14. A p-type AlInP impurity supply layer 4, a current block layer 5, a cap layer 6 are superposed on the grating to complete the distributed reflector 15. With this configuration, the layer 3 is not exposed at the end of the injector 14 at the time of forming the reflector 15, and a laser which is scarcely deteriorated due to oxidation and has high reliability is obtained.
公开日期	1988-11-10
申请日期	1987-04-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64898]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	FUJII HIROAKI. Algainp distributed reflection type semiconductor laser and manufacture thereof. JP1988273387A. 1988-11-10.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。