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	Method of manufacturing surface emitting semiconductor laser
	KAWASHIMA KENJI; IBARAKI AKIRA; FURUSAWA KOTARO; ISHIKAWA TORU
	1991-08-01
著作权人	科学技術振興事業団
专利号	JP1991177089A
国家	日本
文献子类	发明申请
其他题名	Method of manufacturing surface emitting semiconductor laser
英文摘要	PURPOSE:To make it possible to obtain a surface emitting type semiconductor laser, which does not damage electrodes, with high yield by forming a mesa section whose end is rounded. CONSTITUTION:A resist 12 is coated on a wafer 11 where it is baked. Then, an SiO2 film 13 is formed on the resist 12. Further, a pattern resist 14 is formed into a specified shape. After the SiO2 film 13 is etched, the resist 12 is excessively etched from the SiO2 film 13 by O2 plasma etching so that an overhung- shaped mask 15 is formed. Then, the wafer 11 is etched based on a Cl2 plasma RIBE process so that a mesa section 16 is formed. During this process, the ends 16a of the mesa section is rounded in shape.
公开日期	1991-08-01
申请日期	1989-12-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64875]
专题	半导体激光器专利数据库
作者单位	科学技術振興事業団
推荐引用方式 GB/T 7714	KAWASHIMA KENJI,IBARAKI AKIRA,FURUSAWA KOTARO,et al. Method of manufacturing surface emitting semiconductor laser. JP1991177089A. 1991-08-01.

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