Semiconductor laser array device and manufacture thereof
YOSHIKAWA AKIO; SUGINO TAKASHI
1986-01-27
著作权人MATSUSHITA DENKI SANGYO KK
专利号JP1986018189A
国家日本
文献子类发明申请
其他题名Semiconductor laser array device and manufacture thereof
英文摘要PURPOSE:To enable realization of a semiconductor laser array device which operates at a low threshold and is fabricated with a high degree of integration in a single crystal growth, by forming an active layer directly above recesses or projections so that the dimensions of the active layer in directions which are respectively parallel to the cavity resonator surface and the semiconductor junction surface are sufficient to provide two oscillation regions. CONSTITUTION:Stripe-shaped grooves are formed in the surface of a p type GaAs substrate 10 by chemical etching. Then, n type GaAs current blocking layers 11, 20 whose film thickness is smaller than the depth of the grooves are formed. A p type GaAs layer 12, a p type clad layer 13, an active layer 14, an n type clad layer 15 and an n type layer 16 are formed on the layers 11, 20. Although current concentrates on and near the part above each groove, as the current comes closer to the GaAs substrate 10, it diverges and flows along both side surfaces of the groove, thereby forming two laser oscillation regions within the groove. Thus, oscillations take place substantially simultaneously at or near a threshold of 70mA, and stable single transverse mode oscillation is obtained. The volume of each chip of this laser array is reduced to about half of that in a conventional laser array having the same number of laser oscillation regions. Thus, it is possible to reduce the size of the laser array device.
公开日期1986-01-27
申请日期1984-07-05
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/64826]  
专题半导体激光器专利数据库
作者单位MATSUSHITA DENKI SANGYO KK
推荐引用方式
GB/T 7714
YOSHIKAWA AKIO,SUGINO TAKASHI. Semiconductor laser array device and manufacture thereof. JP1986018189A. 1986-01-27.
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