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	Wavelength-tunable semiconductor laser and fabrication process thereof
	KITAMURA MITSUHIRO; YAMAGUCHI MASAYUKI
	1996-01-16
著作权人	NEC CORPORATION
专利号	CA2153909A1
国家	加拿大
文献子类	发明申请
其他题名	Wavelength-tunable semiconductor laser and fabrication process thereof
英文摘要	A wavelength-tunable semiconductor laser comprisesan active region including an active layer generating anoptical gain by injection of a current, a phase-controlregion including a tuning layer generating variation of arefraction index by injection of the current, and adistributed-Bragg-reflector region including a tuning layergenerating variation of a refraction index by injection ofthe current. The active region, the phase-control region andthe distributed-Bragg-reflector region are arranged inalignment in a resonance direction. A diffraction grating isprovided in the vicinity of the tuning layer of thedistributed-Bragg-reflector region. The wavelength-tunablesemiconductor laser includes means for uniformly injecting asecond current to the phase-control region and thedistributed-Bragg-reflector region. An optical-confinementfactor to the tuning layer of the phase-control region isgreater than an optical-confinement factor to the tuninglayer of the distributed-Bragg-reflector type.
公开日期	1996-01-16
申请日期	1995-07-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64799]
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO,YAMAGUCHI MASAYUKI. Wavelength-tunable semiconductor laser and fabrication process thereof. CA2153909A1. 1996-01-16.

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