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	Formation of quantum fine wire or quantum box
	KODAMA KUNIHIKO
	1990-06-25
著作权人	FUJITSU LTD
专利号	JP1990163928A
国家	日本
文献子类	发明申请
其他题名	Formation of quantum fine wire or quantum box
英文摘要	PURPOSE:To control the thicknesses of semiconductor layers as well as to control their widths and lengths at a value in a degree identical with those of their thicknesses and to facilitate the formation of a quantum fine wire or a quantum box by a method wherein a first semiconductor layer is formed on the surface, on which a surface configuration with a pseudo-V- shaped section is provided, of a semiconductor substrate by an isotropic epitaxial growth method and subsequently, a second semiconductor layer is selectively formed by an anisotropic epitaxial growth method and the like. CONSTITUTION:A surface configuration with a pseudo-V-shaped section, which has a crystal face almost parallel to the surface of a single crystal semiconductor GaAs substrate 1 as its base and has crystal faces having an atomic arrangement different from that of the base as its inclined side surfaces, is provided on the surface of the substrate Then, a first semiconductor layer 5 is formed by a growth method that a growth rate does not depend on the base crystal face orientation and a growth thickness can be controlled in the unit of an atomic layer. Then, a second semiconductor layer 6 having a forbidden band width narrower than that of the layer 5 is formed by laminating by a prescribed number of atomic layers only on the crystal face being formed into a pseudo-V-shaped base by a growth method that a growth rate depends on the base crystal face orientation and a growth thickness can be controlled in the unit of an atomic layer. Then, a first semiconductor layer 7 is formed on the substrate surface with the layer 6 formed selectively thereon by a growth method that a growth rate does not depend on the base crystal face orientation and a growth thickness can be controlled in the unit of an atomic layer.
公开日期	1990-06-25
申请日期	1988-12-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64695]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KODAMA KUNIHIKO. Formation of quantum fine wire or quantum box. JP1990163928A. 1990-06-25.

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