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	Liquid-phase epitaxy apparatus
	KUME ICHIRO; HIRONAKA MISAO; OOTA YOICHIRO
	1987-06-27
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1987144321A
国家	日本
文献子类	发明申请
其他题名	Liquid-phase epitaxy apparatus
英文摘要	PURPOSE:To reduce dispersion in composition of an epitaxial layer, in manufacturing a semiconductor element having a double heterostructure, by providing a slanted bottom part of a holder, which is located directly beneath an injecting port, so that used solution does not remain. CONSTITUTION:A boat is placed in the reacting of a liquid epitaxy apparatus. Temperature is increased to 700-800 deg.C in a hydrogen atmosphere. Then the temperature is kept for a specified time period. Thereafter, the boat is slowly cooled at a constant temperature decreasing speed. When the temperature is decreased to a growth starting temperature, a solution well 71 and the like are moved to the direction of an arrow (m) by one cell. At this time, a piston 42 on the solution 62 is pushed down with a tunnel 5. The solution 62 is injected to a gap formed with a substrate wafer 2 from an injecting port 9. The injected solution 62 is moved leftward in the Figure between the substrate wafer 2 and the container wall. Then the solution falls through a hole 93 at the left end and flows into a waste liquid well 8. Since a bottom part 92 of a lower holder beneath the injecting port 9 is slanted, the used solution does not remain.
公开日期	1987-06-27
申请日期	1985-12-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64606]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KUME ICHIRO,HIRONAKA MISAO,OOTA YOICHIRO. Liquid-phase epitaxy apparatus. JP1987144321A. 1987-06-27.

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