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	Manufacture of distributed feedback semiconductor device
	YAMAGUCHI MASAYUKI
	1990-09-18
著作权人	NEC CORP
专利号	JP1990235386A
国家	日本
文献子类	发明申请
其他题名	Manufacture of distributed feedback semiconductor device
英文摘要	PURPOSE:To improve reliability by causing a guide layer to grow by LPE(Liquid Phase Epitaxy) and an active layer to grow by MO-VPE(Metal Organic Vapor Phase Epitaxy). CONSTITUTION:A diffraction grating 5 with periods of 2400Angstrom is formed by luminous flux interference exposure of a laser 2 on an n-type InP substrate 1 and an n-type InGaAsP guide layer 2 with wavelengths of 15mum is formed to 0.1mum thickness by LPE. Further, an n-type InP buffer layer 6 having the thickness of 0.05mum, an MQW active layer 3, a p-type InP clad layer 4 having the thickness of 5mum, and a p-type InGaAsP cap layer 7 having the thickness of 0.5mum are formed one after another by MO-VPE. A multilayer semiconductor layer, with the exception of a stripe-like region which intersects at right angles to the grating 5, is etched in such a way that its etching is deeper than the depth of the layer 3 and then, a mesa-stripe 8 is formed. After that, a high resistance InP layer in which iron is doped by MO-VPE is formed so that the side face of the stripe 8 as well as the surface of the substrate 1 are covered and electrodes 9 and 10 are formed on both surfaces of the semiconductor. In this way, no dislocation takes place and a generated threshold current is low and superior reliability is obtained.
公开日期	1990-09-18
申请日期	1989-03-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64539]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YAMAGUCHI MASAYUKI. Manufacture of distributed feedback semiconductor device. JP1990235386A. 1990-09-18.

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