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	Semiconductor laser comprising a plurality of optically active regions
	MARSH, JOHN HAIG; KIM, SHIN-SUNG
	2004-06-24
著作权人	MARSH JOHN HAIG
专利号	US20040120377A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser comprising a plurality of optically active regions
英文摘要	There is disclosed an improved semiconductor laser device (10), and particularly, a broad area semiconductor laser with a singe-lobed far field pattern. Known broad area lasers are used for high power applications, but suffer from a number of problems such as filamentation, instabilities in the transverse mode, and poor far-field characteristics. The present invention addresses such by providing a semiconductor laser device (10) comprising: a plurality of optically active regions (240); each optically active region (240) including a Quantum Well (QW) structure (77); adjacent optically active regions (24) being spaced by an optically passive region; the/each optically passive region (245) being Quantum Well Intermixed (QW). The spacing between adjacent optically active regions (240) may conveniently be termed "segmentation".
公开日期	2004-06-24
申请日期	2002-02-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64498]
专题	半导体激光器专利数据库
作者单位	MARSH JOHN HAIG
推荐引用方式 GB/T 7714	MARSH, JOHN HAIG,KIM, SHIN-SUNG. Semiconductor laser comprising a plurality of optically active regions. US20040120377A1. 2004-06-24.

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