Semiconductor laser comprising a plurality of optically active regions | |
MARSH, JOHN HAIG; KIM, SHIN-SUNG | |
2004-06-24 | |
著作权人 | MARSH JOHN HAIG |
专利号 | US20040120377A1 |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser comprising a plurality of optically active regions |
英文摘要 | There is disclosed an improved semiconductor laser device (10), and particularly, a broad area semiconductor laser with a singe-lobed far field pattern. Known broad area lasers are used for high power applications, but suffer from a number of problems such as filamentation, instabilities in the transverse mode, and poor far-field characteristics. The present invention addresses such by providing a semiconductor laser device (10) comprising: a plurality of optically active regions (240); each optically active region (240) including a Quantum Well (QW) structure (77); adjacent optically active regions (24) being spaced by an optically passive region; the/each optically passive region (245) being Quantum Well Intermixed (QW). The spacing between adjacent optically active regions (240) may conveniently be termed "segmentation". |
公开日期 | 2004-06-24 |
申请日期 | 2002-02-15 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/64498] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MARSH JOHN HAIG |
推荐引用方式 GB/T 7714 | MARSH, JOHN HAIG,KIM, SHIN-SUNG. Semiconductor laser comprising a plurality of optically active regions. US20040120377A1. 2004-06-24. |
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