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	Compound semiconductor element
	EBE KOJI; NISHIJIMA YOSHITO; SHINOHARA KOJI
	1987-12-17
著作权人	FUJITSU LTD
专利号	JP1987291193A
国家	日本
文献子类	发明申请
其他题名	Compound semiconductor element
英文摘要	PURPOSE:To enable the easy attainment of a hetero junction of pb1-xSnxTe compound semiconductor crystals having a boundary conspicuous in a crystal composition difference, by interposing a rare-earth chalcogenide layer between hetero junction portions. CONSTITUTION:A first Pb1-xSnxTe crystal layer 12 is formed on a PbTe substrate crystal 11 by a molecular-beam epitaxial crystal growth method or the like. A second Pb1-xSnxTe crystal layer 14 of the same quality as the first crystal layer 12 can be formed on an interposed rare-earth chalcogenide layer 13 by an epitaxial growth method. In a hetero junction substance of two kinds of Pb1-xSnxTe compound semiconductor crystals different in composition, of a compound semiconductor element having such a construction as the above, the mutual diffusion of Sn on the boundary of the hetero junction thereof is checked easily by the interposition of the rare-earth chalcogenide layer 13 comprising EuTe and others. Since the thickness of the interposed rare-earth chalcogenide layer 13 is so small as that of one-atom layer, in addition, no change in a band gap is brought about, and thus the hetero junction substance of the Pb1-xSnxTe compound semiconductor crystals having a hetero interface conspicuous in a crystal composition difference can be obtained easily.
公开日期	1987-12-17
申请日期	1986-06-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64477]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	EBE KOJI,NISHIJIMA YOSHITO,SHINOHARA KOJI. Compound semiconductor element. JP1987291193A. 1987-12-17.

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