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	Refractive index waveguide type distortion quantum well laser
	FUKUNAGA TOSHIAKI; WATANABE KENJI; TAKAMORI TAKESHI
	1992-10-06
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1992280491A
国家	日本
文献子类	发明申请
其他题名	Refractive index waveguide type distortion quantum well laser
英文摘要	PURPOSE:To provide a refractive index waveguide type distortion quantum well semiconductor laser operating with small current where an active layer which is formed on a substrate with difference in level having an A-face at a corner with molecular beam epitaxial growth, the connection of the active layer is interrupted by the difference in steps on the substrate, the allowance of the stress applied on the active layer near the light-emitting region is large, and the substrate face bearing reliance of the growth is utilized. CONSTITUTION:In a refractive index waveguide type distortion quantum well semiconductor laser, provided are a substrate with difference in level 11 having an (n11) A-face (where n is any integer of 1, 2, 3) at a corner, and an active layer 19 formed on the substrate with difference in level 11 with molecular beam epitaxial growth. The connection of the active layer 19 is interrupted by the difference in level on the substrate 19, the allowance of the stress applied on the active layer near the light-emitting region is made larger, and the dependency of the growth on the face orientation of the substrate is utilized.
公开日期	1992-10-06
申请日期	1991-03-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64460]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	FUKUNAGA TOSHIAKI,WATANABE KENJI,TAKAMORI TAKESHI. Refractive index waveguide type distortion quantum well laser. JP1992280491A. 1992-10-06.

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