QQ客服 官方微博 反馈留言

	Semiconductor laser ray source
	TERAISHI KATSUHIRO
	1989-10-27
著作权人	SEIKO EPSON CORP
专利号	JP1989270381A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser ray source
英文摘要	PURPOSE:To facilitate the manufacture of a laser ray source, improve it in reliability, and enable it to be integrated into an IC by a method wherein a part of laser rays, which is advancing in an optical guidewave, is made to vary in phase through an electro-optical effect of an optical waveguide single crystal material to make the travel of an optical beam deflected. CONSTITUTION:A P electrode 18 (the sane as 4) of an optical beam deflection section is provided onto a center line of a region 21 of an optical waveguide. A region 23 is irradiated with an ion beam of an n-type dopant Se to form an n-type conductive layer on a part of a p layer so as to construct a P-N junction in a direction parallel to an active layer 15. In this process, a p-n-type junction is formed at the junction of the n-type conductive layer with a p active layer 15 by increasing the doping amount of Se. As a result, when a reverse bias voltage is applied on the P electrode 18, a depletion layer is formed in parts 22-1 and 22-2 is the region 21 of the active layer 15 to generate intense electric fields. Two intense electric fields are parallel to the active layer 15 and opposite to each other by 180 deg. in a direction. Therefore, a light wave is made to advance in phase at the part 22-1 and lag in phase at the part 22-2, and the light wave as a whole passing through the region 21 is deflected rightwards as shown by an arrow 8. The deflection angle is approximately proportional to an applied voltage.
公开日期	1989-10-27
申请日期	1988-04-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64424]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TERAISHI KATSUHIRO. Semiconductor laser ray source. JP1989270381A. 1989-10-27.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。