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	Crystal growth method
	SASAI YOICHI; OGURA MOTOTSUGU
	1988-04-28
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1988098120A
国家	日本
文献子类	发明申请
其他题名	Crystal growth method
英文摘要	PURPOSE:To substantially eliminate the warpage of a substrate thereby to obtain a preferable crystal by forming a stripelike insulating film on the substrate, and selectively forming an epitaxial layer on the substrate except the insulating film forming region. CONSTITUTION:When a GaAs epitaxial layer 3 is grown by a vapor growing method, such as an MBE or an MOVPE method, etc. on a wafer 1, a GaAs polycrystal 4 is deposited on an SiO2 film 2 of latticelike stripe. At this time the warpage of a substrate is substantially alleviated to form a preferable crystal. Then, the layer 3 is selectively coated by a photolithography method with a photoresist 5, the crystal 4 and the film 2 are etched to allow the layer 3 to remain on the Si substrate 1 to cumplete the process.
公开日期	1988-04-28
申请日期	1986-10-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64403]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SASAI YOICHI,OGURA MOTOTSUGU. Crystal growth method. JP1988098120A. 1988-04-28.

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