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	Single-mode dbr laser with improved phase-shift section and method for fabricating same
	HWANG, WEN-YEN; ANSELM, KLAUS, ALEXANDER; ZHENG, JUN
	2005-06-15
著作权人	APPLIED OPTOELECTRONICS INC.
专利号	EP1509975A4
国家	欧洲专利局
文献子类	发明申请
其他题名	Single-mode dbr laser with improved phase-shift section and method for fabricating same
英文摘要	An edge-emitting laser (100) for generating single-longitudinal mode laser light. A semiconductor active region (120) amplifies, by stimulated emission, light in the laser cavity at a lasing wavelength. There are first and second grating sections (141,143) adjacent to the active region (120) and having first and second reflectivities respectively and a first effective index of refraction. The first and second grating sections (141,143) have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section (142) is disposed adjacent to the active region (120) and between the first and second grating sections (141,143) and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve longitudinal mode operation.
公开日期	2005-06-15
申请日期	2003-05-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64392]
专题	半导体激光器专利数据库
作者单位	APPLIED OPTOELECTRONICS INC.
推荐引用方式 GB/T 7714	HWANG, WEN-YEN,ANSELM, KLAUS, ALEXANDER,ZHENG, JUN. Single-mode dbr laser with improved phase-shift section and method for fabricating same. EP1509975A4. 2005-06-15.

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