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	Selective-emitting lasers
	CLAUSEN, EDWARD, MARTIN, JR.; COLAS, ETIENNE, GUY; VON LEHMEN, ANN, CHRISTINE
	1993-08-25
著作权人	BELL COMMUNICATIONS RESEARCH, INC.
专利号	EP0556317A1
国家	欧洲专利局
文献子类	发明申请
其他题名	Selective-emitting lasers
英文摘要	A method of etching and regrowing III-V compounds in a sharply defined vertical feature. Molecular beam epitaxy is used to grow a laterally undefined vertical-cavity, surface-emitting diode laser structure from semiconducting III-V materials. The structure includes interference mirrors defining the end of a Fabry-Perot cavity and a quantum-well layer in the middle of the cavity. A tungsten mask is then defined over the areas of the intended two-dimensional array of lasers. A chemically assisted ion beam etches through to the bottom of the laser structure to from an array of high aspect-ratio pillars. A thermal chlorine gas etch removes a portion of the sidewalls of the pillars without attacking the tungsten, thereby removing ion-beam damage at the sides of the vertical-cavities and creating a lip of the tungsten mask overhanging the pillar sidewall. Organo-metallic chemical vapor deposition is used to regrow III-V material around the pillars. This growth process can quickly planarize the pillars. The tungsten lip prevents the growth from climbing over the top of the pillar. The regrown material may be insulating, or may include conductive portions ot provide laser contact, or may be selected to provide tailored index guiding in the laser device.
公开日期	1993-08-25
申请日期	1991-10-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64293]
专题	半导体激光器专利数据库
作者单位	BELL COMMUNICATIONS RESEARCH, INC.
推荐引用方式 GB/T 7714	CLAUSEN, EDWARD, MARTIN, JR.,COLAS, ETIENNE, GUY,VON LEHMEN, ANN, CHRISTINE. Selective-emitting lasers. EP0556317A1. 1993-08-25.

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