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	Low voltage defect super high efficiency diode sources
	KHALFIN, VIKTOR BORISOVITCH; ABELES, JOSEPH H.; KWAKERNAAK, MARTIN; WHALEY, RALPH DOUD JR.; AN, HAIYAN
	2005-07-14
著作权人	SARNOFF CORPORATION
专利号	US20050152424A1
国家	美国
文献子类	发明申请
其他题名	Low voltage defect super high efficiency diode sources
英文摘要	A high efficiency, low voltage defect laser, and a method of forming a high efficiency laser. The low voltage defect laser includes at least one p-clad layer, at least one n-clad layer, and at least one waveguide of at least a plurality of quantum wells. The at least one waveguide is sandwiched at least between the p-clad layer and the n-clad layer, and at least one permeable crystal layer may be embedded in the p-clad layer and immediately adjacent to the at least one waveguide. The method includes growing an AlGaAs layer atop a GaAs layer, etching of the AlGaAs into submicron structure, oxidizing the AlGaAs, SAG undoped growing of an SAG undoped GaAs atop the GaAs layer, and regrowing, with p++ doped GaAs, of a planar-buried p++ GaAs.
公开日期	2005-07-14
申请日期	2004-08-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64238]
专题	半导体激光器专利数据库
作者单位	SARNOFF CORPORATION
推荐引用方式 GB/T 7714	KHALFIN, VIKTOR BORISOVITCH,ABELES, JOSEPH H.,KWAKERNAAK, MARTIN,et al. Low voltage defect super high efficiency diode sources. US20050152424A1. 2005-07-14.

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