Visible light emitting semiconductor laser device | |
KUKIMOTO HIROSHI | |
1989-07-12 | |
著作权人 | INKIYUUBEETAA JAPAN:KK |
专利号 | JP1989175789A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Visible light emitting semiconductor laser device |
英文摘要 | PURPOSE:To assure the title semiconductor laser device which emits green laser light by using a group II-VI semiconductor crystal laser as a cladding layer, and further using InxGayAlzP as an active layer forming material. CONSTITUTION:A first conductivity type group II-VI semiconductor crystal layer 2 is grown in vapor phase as a cladding layer on a semiconductor sub strate crystal 1, on which a first conductivity type or second conductivity type InxGayAlzP (here, x+y+z=1) semiconductor crystal layer 3 is grown in vapor phase as an active layer, on which a second conductivity type group II-VI semi conductor, crystal layer 4 is further grown in vapor phase as a cladding layer. For example, an n-type ZnSxSe1-x crystal layer 2 is grown in vapor phase on an n type GaAs semiconductor substrate crystal 1 as a first cladding layer, on which an n-type or p-type InxGayAlzP crystal layer 3 is grown in vapor phase as an active layer, on which a p-type ZnSxSe1-x crystal layer 4 is further grown in vapor phase as a second cladding layer. |
公开日期 | 1989-07-12 |
申请日期 | 1987-12-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/64232] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | INKIYUUBEETAA JAPAN:KK |
推荐引用方式 GB/T 7714 | KUKIMOTO HIROSHI. Visible light emitting semiconductor laser device. JP1989175789A. 1989-07-12. |
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