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	Visible light emitting semiconductor laser device
	KUKIMOTO HIROSHI
	1989-07-12
著作权人	INKIYUUBEETAA JAPAN:KK
专利号	JP1989175789A
国家	日本
文献子类	发明申请
其他题名	Visible light emitting semiconductor laser device
英文摘要	PURPOSE:To assure the title semiconductor laser device which emits green laser light by using a group II-VI semiconductor crystal laser as a cladding layer, and further using InxGayAlzP as an active layer forming material. CONSTITUTION:A first conductivity type group II-VI semiconductor crystal layer 2 is grown in vapor phase as a cladding layer on a semiconductor sub strate crystal 1, on which a first conductivity type or second conductivity type InxGayAlzP (here, x+y+z=1) semiconductor crystal layer 3 is grown in vapor phase as an active layer, on which a second conductivity type group II-VI semi conductor, crystal layer 4 is further grown in vapor phase as a cladding layer. For example, an n-type ZnSxSe1-x crystal layer 2 is grown in vapor phase on an n type GaAs semiconductor substrate crystal 1 as a first cladding layer, on which an n-type or p-type InxGayAlzP crystal layer 3 is grown in vapor phase as an active layer, on which a p-type ZnSxSe1-x crystal layer 4 is further grown in vapor phase as a second cladding layer.
公开日期	1989-07-12
申请日期	1987-12-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64232]
专题	半导体激光器专利数据库
作者单位	INKIYUUBEETAA JAPAN:KK
推荐引用方式 GB/T 7714	KUKIMOTO HIROSHI. Visible light emitting semiconductor laser device. JP1989175789A. 1989-07-12.

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