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	Manufacture of semiconductor integrated circuit device
	HAMADA TAKESHI; SHIMIZU YUICHI; ITO KUNIO
	1987-10-08
著作权人	MATSUSHITA ELECTRONICS CORP
专利号	JP1987230077A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor integrated circuit device
英文摘要	PURPOSE:To readily form a plurality of elements which needs different conductivity type substrates on the same substrate by forming steps on the substrates, growing a semiconductor layer for forming a first element, and removing the semiconductor layer on the top of the step to form a second element on the surface. CONSTITUTION:A step is formed by etching on a semiinsulating GaAs substrate A P-type GaAs layer 2 and an N-type GaAs layer 3 are sequentially grown by a liquid epitaxial method on the substrate 1 formed with the step. A groove which reaches at bottom the layer 2 is formed by etching on the lower portion of the step of a wafer. Then, a P-type Ga1-yAlyAs clad layer 5, a non-doped Ga1-xAlxAs active layer 5, an N-type Ga1-yAlyAs clad layer 6 and an N-type GaAs layer 7 are sequentially grown by a liquid epitaxial method on the wafer. Thereafter, the surface of the wafer is etched to expose the substrate 1, and ion-implanted to form an active region 9 of an FET. Thereafter, a laser P-type side electrode 8a, an N-type side electrode 8b and an FET electrode 8c are formed. Thus, the electrodes can be formed without necessity of complicated selective etching.
公开日期	1987-10-08
申请日期	1986-03-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64222]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRONICS CORP
推荐引用方式 GB/T 7714	HAMADA TAKESHI,SHIMIZU YUICHI,ITO KUNIO. Manufacture of semiconductor integrated circuit device. JP1987230077A. 1987-10-08.

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