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	Semiconductor device and method of manufacturing such a device
	DE POORTER, JOHANNES ANTONIUS; VALSTER, ADRIAAN
	1992-11-19
著作权人	PHILIPS ELECTRONICS N.V.
专利号	EP0513905A1
国家	欧洲专利局
文献子类	发明申请
其他题名	Semiconductor device and method of manufacturing such a device
英文摘要	Semiconductor devices comprising a semiconductor structure (D3) of parallel semiconductor layers on a semiconductor substrate (1), in which layers a mesa (12) is formed which comprises only a portion (D1) of the semiconductor layer structure (D3) find their application, for example, in optoelectronic devices in which the mesa (12) forms part of a semiconductor diode laser or a radiation waveguide. During cleaving of such devices, for example for the formation of a mirror surface, damage often arises near the mesa (12), which is undesirable. The mesa (12), which projects from the device, is also easily damaged during further manipulation of the device. According to the invention, the semiconductor layer structure (D3) comprises a sunken region (11) within which the semiconductor layer structure (D3) is at least partly recessed into the substrate (1), while the mesa (12) is positioned within the boundaries of the sunken region (11). As a result, the mesa (12) is also recessed at least partly, and thus at least partly protected. In addition, less damage occurs near the mesa (12) during cleaving. When the mesa (12) is entirely recessed, the device is in addition particularly suitable for upside-down final mounting. In a method according to the invention, a recess (11) is provided in the substrate (1) before the semiconductor layer structure (D3) and the mesa (12) therein are provided. This method is very simple and gives a high yield of devices having the required characteristics.
公开日期	1992-11-19
申请日期	1992-05-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64215]
专题	半导体激光器专利数据库
作者单位	PHILIPS ELECTRONICS N.V.
推荐引用方式 GB/T 7714	DE POORTER, JOHANNES ANTONIUS,VALSTER, ADRIAAN. Semiconductor device and method of manufacturing such a device. EP0513905A1. 1992-11-19.

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