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	Manufacture of algainp semiconductor laser
	IKEDA MASAO
	1986-07-05
著作权人	ソニー株式会社
专利号	JP1986147592A
国家	日本
文献子类	发明申请
其他题名	Manufacture of algainp semiconductor laser
英文摘要	PURPOSE:To obtain a stable semiconductor laser with good characteristics by a method wherein, before an irregular processing is performed, the luminescent mechanism part is formed of an organic metal of an AlGaInP semiconductor or by the metal vapor-phase growth method. CONSTITUTION:A buffer layer 22, a first clad layer 23, an active layer 24 and a second clad layer 25 are made to grow in order on the main surface of an n-type GaAs single crystal substrate 21, and further successively, a protective semiconductor layer 26 for the second clad layer 25 is made to grow on the second clad layer 25 and a current constricting layer 27 is made to grow there on. The buffer layer 22, the first clad layer 23 and the current constricting layer 27 have the same n-type conductive type as that of the substrate 21, and the second clad layer 25 and the protective semiconductor layer 26 for the second clad layer 25 have the p-type conductive type inverse to the n-type conductive of the substrate 2 An electrode 29 on one side is ohmically formed by adhesion on a cap layer 28 and an electrode 30 on the other side is ohmically formed by adhesion on the back surface of the substrate 2
公开日期	1986-07-05
申请日期	1984-12-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64211]
专题	半导体激光器专利数据库
作者单位	ソニー株式会社
推荐引用方式 GB/T 7714	IKEDA MASAO. Manufacture of algainp semiconductor laser. JP1986147592A. 1986-07-05.

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