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	Heat treatment for compound semiconductor wafer
	WATANABE HISATSUNE; HAYASHI ITSUO
	1982-09-08
著作权人	NIPPON DENKI KK
专利号	JP1982145311A
国家	日本
文献子类	发明申请
其他题名	Heat treatment for compound semiconductor wafer
英文摘要	PURPOSE:To improve the quality of a compound semiconductor crystal which is contaminated by a heavy metal by covering III-V group semiconductor compound wafer with a thermal decomposition controlling protection film in a condition having a misfit transposition based on grating constant difference. CONSTITUTION:As an example, a three-dimensional mixed crystal of Ga Aso9Po is formed at 2mu by a vapor growth processing on the surface of GaAs epitaxial wafer for infrared ray luminous diode use and a misfit transposition is introduced. The surface of the GaAso9Po layer is covered with Si3N4 film of 0.1mu and a heat treatment is provided for the surface at 850 deg.C for 5hr in an argon atmosphere. The light emitting effect due to the heat treatment as described above can be improved remarkably and the quality of the compound semiconductor crystal contaminated also be improved remarkably.
公开日期	1982-09-08
申请日期	1981-03-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64179]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	WATANABE HISATSUNE,HAYASHI ITSUO. Heat treatment for compound semiconductor wafer. JP1982145311A. 1982-09-08.

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