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	High-power infrared semiconductor diode light emitting device
	BEAN, DAVID M.; QIAN, YI; PULVER, DANIEL E.
	2007-01-04
著作权人	SEMINEX CORPORATION
专利号	US20070002915A1
国家	美国
文献子类	发明申请
其他题名	High-power infrared semiconductor diode light emitting device
英文摘要	A semiconductor laser diode using the aluminum gallium, arsenide, gallium indium arsenide phosphide, indium phosphide, (AlGaInAs/GaInAsP/InP) material system and related combinations is disclosed. Both the design of the active layer and the design of the optical cavity are optimized to minimize the temperature rise of the active region and to minimize the effects of elevated active layer temperature on the laser efficiency. The result is a high output power semiconductor laser for the wavelengths between 30 and 61 micrometers for the pumping of erbium doped waveguide devices or for direct use in military, medical, or commercial applications.
公开日期	2007-01-04
申请日期	2005-09-22
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64177]
专题	半导体激光器专利数据库
作者单位	SEMINEX CORPORATION
推荐引用方式 GB/T 7714	BEAN, DAVID M.,QIAN, YI,PULVER, DANIEL E.. High-power infrared semiconductor diode light emitting device. US20070002915A1. 2007-01-04.

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