| 110 oriented group iv-vi semiconductor structure, and method for making and using the same | |
| ZHISHENG, SHI | |
| 2006-10-25 | |
| 著作权人 | ZHISHENG, SHI |
| 专利号 | EP1714359A2 |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | 110 oriented group iv-vi semiconductor structure, and method for making and using the same |
| 英文摘要 | A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-IV material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to t he lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device. |
| 公开日期 | 2006-10-25 |
| 申请日期 | 2005-02-04 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64160]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ZHISHENG, SHI |
| 推荐引用方式 GB/T 7714 | ZHISHENG, SHI. 110 oriented group iv-vi semiconductor structure, and method for making and using the same. EP1714359A2. 2006-10-25. |
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