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	Diffraction grating and semiconductor laser
	MIYAZAWA SEIICHI
	1990-08-10
著作权人	CANON INC
专利号	JP1990201991A
国家	日本
文献子类	发明申请
其他题名	Diffraction grating and semiconductor laser
英文摘要	PURPOSE:To provide easily a diffraction grating of a desired diffraction grating period by making a plurality kinds of diffraction grating materials perform an epitaxial growth after tilting them at a prescribed angle in an approximate orientation from a face {100} and further, by making them form each periodic structure. CONSTITUTION:If a crystal surface is cut by tilting it from a face {100} in an approximate orientation , combination of the face {100} with the face is obtained easily. As a period (d) of 97 in a figure is 1140Angstrom and molecular layers are formed one by one, the inclination angle 100 of a substrate crystal surface becomes 0.142 deg. by an expression theta=tan(h0/d), provided that the thickness h0 of an atomic layer is 2.8Angstrom and a period (d) is 1140Angstrom . Further, a diffraction grating is separated into an AlAs region 98 and a GaAs region 99 to form a periodic structure. The primary diffraction grating of a desired diffraction grating period is thus obtained.
公开日期	1990-08-10
申请日期	1989-01-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64159]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	MIYAZAWA SEIICHI. Diffraction grating and semiconductor laser. JP1990201991A. 1990-08-10.

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