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	Multilayer liquid-phase epitaxial growth method
	KISHI YUTAKA; NAKAJIMA KAZUO; YAMAZAKI SUSUMU
	1983-11-08
著作权人	FUJITSU KK
专利号	JP1983191429A
国家	日本
文献子类	发明申请
其他题名	Multilayer liquid-phase epitaxial growth method
英文摘要	PURPOSE:To remove melt backs in a defect section and an edge growth section, to improve yield as a whole and to reduce a misfit dislocation by extracting a section to be grown once at the stage of a four-element layer, completely removing the defect section and the edge growth section and growing InP again. CONSTITUTION:The temperatures of an InP substrate 1 and a boat, to which a perdetermined melt is changed, are elevated in hydrogen gas, they are left as they are kept at fixed temperature and their temperatures are dropped, growth is started, and an InP buffer layer 2, an In0.53Ga0.47As layer 3 and an InGaAsP layer 4 are liquid-grown on the InP substrate 1 in succession. A wafer, the edge growth section thereof is removed at a section separating from an end by 2mm. is removed and the larger defect section not grown thereof is removed, is treated through etching, and set to the boat again, and an InP crystal is grown on the InGaAsP epitaxial layer of InP substrate/InP buffer layer/In0.53Ga0.47As layer/ InGaAsP layer structure from an InP solution. Accordingly, an InP/four element/ three element/InP substrate wafer in which the melt backs are prevented completely is obtained.
公开日期	1983-11-08
申请日期	1982-05-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64082]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	KISHI YUTAKA,NAKAJIMA KAZUO,YAMAZAKI SUSUMU. Multilayer liquid-phase epitaxial growth method. JP1983191429A. 1983-11-08.

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