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	Active region of a light emitting device optimized for increased modulation speed operation
	TANDON, ASHISH; DJORDJEV, KOSTADIN; LIN, CHAO-KUN; TAN, MICHAEL R.T.
	2006-12-07
著作权人	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
专利号	US20060274801A1
国家	美国
文献子类	发明申请
其他题名	Active region of a light emitting device optimized for increased modulation speed operation
英文摘要	In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.
公开日期	2006-12-07
申请日期	2005-06-01
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64047]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
推荐引用方式 GB/T 7714	TANDON, ASHISH,DJORDJEV, KOSTADIN,LIN, CHAO-KUN,et al. Active region of a light emitting device optimized for increased modulation speed operation. US20060274801A1. 2006-12-07.

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