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	Semiconductor distribution feedback type laser device
	TADA KUNIO; NAKANO YOSHIAKI; INOUE TAKESHI; RA TAKESHI; IRITA TAKESHI; NAKAJIMA SHINICHI
	1992-05-28
著作权人	HIKARI KEISOKU GIJIYUTSU KAIHATSU KK
专利号	JP1992155986A
国家	日本
文献子类	发明申请
其他题名	Semiconductor distribution feedback type laser device
英文摘要	PURPOSE:To form gain regions and absorptive regions alternately so as to get a large intermode gain by providing light absorbing layer at each apex of a semiconductor layer. CONSTITUTION:Each layer of double hetero junction structure is epitaxially grown separately in two stages. In the first stage, a clad layer 3, a semiconductor layer 4, a light absorbing layer 3 are grown on a substrate Next, by interfering exposure method and chemical etching, irregularities equivalent to the diffraction grating 256nm in cycle are marked at the light absorbing layer 13 and the semiconductor layer 4. In the second stage, a shock absorbing layer 6 is grown on the light absorbing layer 13 and the semiconductor layer 4, and further an active layer 7, a clad layer 8, and a contact layer 9 are grown in order continuously to complete double hetero structure. Next, an SiO2 insulating layer 12 is stacked on the top of the contact layer 9 to form a stripe-shaped window, for example, 10mum in width, and then electrode layers 11 and 10 are deposited. Furthermore, this is cleaved to complete individual semiconductor laser elements.
公开日期	1992-05-28
申请日期	1990-10-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63956]
专题	半导体激光器专利数据库
作者单位	HIKARI KEISOKU GIJIYUTSU KAIHATSU KK
推荐引用方式 GB/T 7714	TADA KUNIO,NAKANO YOSHIAKI,INOUE TAKESHI,et al. Semiconductor distribution feedback type laser device. JP1992155986A. 1992-05-28.

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