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	Manufacture of distributed feedback semiconductor laser
	FUJIWARA MASATOSHI
	1990-03-05
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990065192A
国家	日本
文献子类	发明申请
其他题名	Manufacture of distributed feedback semiconductor laser
英文摘要	PURPOSE:To partly vary the ratio of thicknesses of an active layer to a waveguide layer and to obtain a single wavelength oscillation with a low threshold value by employing the selective growth of an optical CVD crystal growing technique in a distributed feedback semiconductor laser. CONSTITUTION:A shielding mask 5 is mounted on a semiconductor substrate 1 formed with a diffraction grating thereby to form an optical guide 2 while radiating the part with a light. Then, a shielding mask 6 is employed to invert the part to be radiated with the light and the part to be shielded thereby to form an active layer 3. Thereafter, a different conductivity type clad layer 4 from the substrate 1 is formed. After these crystal growths are finished, a mesa stripe is formed, buried, grown to form electrodes, and its refractive index is varied on the way of the layer 2 to obtain a similar effect to that of a lambda/4 sift method. A distributed feedback semiconductor laser in which enables a single wavelength oscillation only at the Bragg's wavelength is obtained.
公开日期	1990-03-05
申请日期	1988-08-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63943]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	FUJIWARA MASATOSHI. Manufacture of distributed feedback semiconductor laser. JP1990065192A. 1990-03-05.

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