Semiconductor optical amplifying element, semiconductor optical element and method for using these elements
NITTA ATSUSHI
1991-11-06
著作权人キヤノン株式会社
专利号JP1991248130A
国家日本
文献子类发明申请
其他题名Semiconductor optical amplifying element, semiconductor optical element and method for using these elements
英文摘要PURPOSE:To obtain an always high gain state by forming regions which are electrically changed in the refractive index of a semiconductor near the end of a semiconductor laser and changing the refractive index of these regions. CONSTITUTION:The constitution to electrically control the refractive index of the waveguide layer parts, i.e. window waveguide layers 7a, 7b in contact with antireflection films 10a, 10b in such a manner that the reflectivity of the antireflection films 10a, 10b is smaller with respect to the wavelength of input light or the peak wavelength at the gain spectra of an active layer 4 is adopted. The equiv. refractive index of the window waveguide layers 7a, 7b is, therefore, changed by a plasma effect. The higher current injection state, i.e. high gain state is obtd. in this way.
公开日期1991-11-06
申请日期1990-02-27
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/63895]  
专题半导体激光器专利数据库
作者单位キヤノン株式会社
推荐引用方式
GB/T 7714
NITTA ATSUSHI. Semiconductor optical amplifying element, semiconductor optical element and method for using these elements. JP1991248130A. 1991-11-06.
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