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	Semiconductor laser apparatus and method of driving same
	ISHIKAWA MAKOTO; KATAYAMA RYUICHI; YUASA TSUNAO
	1989-10-06
著作权人	NEC CORP
专利号	JP1989251775A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser apparatus and method of driving same
英文摘要	PURPOSE:To realize a high-output and low-noise characteristic which is optimum as a light source of an addition-record and rewrite type optical disk or the like even without using a high-frequency superposed circuit by a method wherein a switch used to connect a second conductivity type electrode layer in an absorption region to a first conductivity type semiconductor substrate is installed and an excitation region is coupled optically to the absorption region. CONSTITUTION:While an absorption region 11 and an excitation region 12 are kept optically coupled by means of an electrode-separating groove 13, a semiconductor laminate structure is separated electrically into the absorption region 11 and the excitation region 12; a switch 14 which connects a second conductivity type electrode layer in the absorption region to a first conductivity type semiconductor substrate directly or via a resistance in accordance with a control signal supplied from the outside is installed. When the changeover switch 14 is connected to B, the absorption region 11 is grounded and this absorption region 11 functions as an oversaturation absorber; accordingly, a self-oscillation is generated and a low-noise characteristic can be obtained. On the other hand, when the changeover switch 14 is connected to A, a carrier is injected also to the absorption region 11 in the same manner as in the excitation region 12, and a high-output characteristic can be obtained. Accordingly, when the switch 14 is changed over in synchronization with a changeover operation between a drive voltage V2 at a high output and a drive voltage V1 at a low output, a low-noise oscillation and a high-output oscillation can be obtained alternately.
公开日期	1989-10-06
申请日期	1988-03-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63150]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	ISHIKAWA MAKOTO,KATAYAMA RYUICHI,YUASA TSUNAO. Semiconductor laser apparatus and method of driving same. JP1989251775A. 1989-10-06.

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