Semiconductor laser beam generating equipment
KITAJIMA HIROSHI; YOSHIDA TOMIYOSHI; MORISHITA KOJI; NAKATSUKA NOBUO
1987-05-28
著作权人OMRON TATEISI ELECTRONICS CO
专利号JP1987117382A
国家日本
文献子类发明申请
其他题名Semiconductor laser beam generating equipment
英文摘要PURPOSE:To prevent the deviation between a laser beam and a mirror cylinder, and make it possible to adjust precisely an optical axis deviation, by supporting a light source part and a mirror cylinder part by the same supporting part made of invar, surrounding the supporting part of a semiconductor laser of light source with heat-insulating material, and holding the light source part from outside by a screw. CONSTITUTION:A semiconductor element 11 is adjusted in its temperature by a Peltier element 14 via a supporting part 12 made of copper. The supporting part 12 is surrounded with heat- insulating material, and its temperature adjusting efficiency is excellent. The radiation side of the Peltier element 14 is coupled with a radiation fin 18 via an element-fixing plate 15 of copper and thermal conduction parts 16 and 17, and its temperature adjusting efficiency is excellent. Accordingly, the spread beam from the laser element 11 is transmitted toward mirror cylinders 21 and 23 with a desired diameter and direction. As to beam shaping, the mirror cylinder 21 is rotated against a supporting part 19, and shifted in the direction of optical axis to realize a desired beam B. The light source parts 11-14 and the mirror surface parts 21-25 are held by a supporting part 19 of invar, and the mirror cylinders 21 and 23 are also made of invar. A light source part is kept in a constant temperature, so that the deviation caused by temperature does not occure between the laser element and the mirror cylinder. Optical axis deviation is adjusted by the screw 20 of the supporting part 19.
公开日期1987-05-28
申请日期1985-11-18
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/63005]  
专题半导体激光器专利数据库
作者单位OMRON TATEISI ELECTRONICS CO
推荐引用方式
GB/T 7714
KITAJIMA HIROSHI,YOSHIDA TOMIYOSHI,MORISHITA KOJI,et al. Semiconductor laser beam generating equipment. JP1987117382A. 1987-05-28.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace