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	Method for forming electrode of semiconductor element
	YAMAGUCHI MASAYUKI; UEHARA KUNIO; NOGUCHI HIDEAKI
	1986-05-26
著作权人	NEC CORP
专利号	JP1986108166A
国家	日本
文献子类	发明申请
其他题名	Method for forming electrode of semiconductor element
英文摘要	PURPOSE:To obtain an electrode, which is rigidly bonded to a package and the like, by attaching a lower electrode for ohmic connection in a single-layer or multilayer structure to the surface of a semiconductor element substrate, performing heat treatment, and providing an upper electrode, whose topmost layer has a single-layer or multilayer structure of Au. CONSTITUTION:On the P-side surface of a semiconductor laser 1, Cr 4 and Au 5 are evaporated as a lower electrode in this order. Then heat treatment is performed in an N2 atmosphere at 360 deg.C for about 30min. Ti 6 and Au 7 are sequentially sputtered as an upper electrode 3. The thickness of the layers are as follows: 500Angstrom for Cr, 1,000Angstrom for Au, 1,000Angstrom for Ti and 5,000Angstrom for Au. In this constitution, the upper-layer electrode is attached after the heat treatment of the lower-layer electrodes in fusing of AuSn to a heat sink, and no deposition occurs from the lower electrode to the upper electrode. Excellent alloy reaction occurs and regid bonding is accomplished.
公开日期	1986-05-26
申请日期	1984-10-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62951]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YAMAGUCHI MASAYUKI,UEHARA KUNIO,NOGUCHI HIDEAKI. Method for forming electrode of semiconductor element. JP1986108166A. 1986-05-26.

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