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	Semiconductor laser-photodetector beam integrate element
	KITAMURA MITSUHIRO; KOBAYASHI ISAO; SUGIMOTO SHIGETOKI
	1983-05-20
著作权人	NIPPON DENKI KK
专利号	JP1983084486A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser-photodetector beam integrate element
英文摘要	PURPOSE:To remove the reinjection of reflected light from the light receiving surface of a photodetector to a semiconductor laser, and to eliminate the reflecting noises of the photodetector by making a distance between the light receiving surface and a laser resonator surface opposite to the light receiving surface the shortest in the uicinity of a laser resonant axis. CONSTITUTION:One resonator surface 105 of the hetero-structure semiconductor laser (BH-LD) 101 is formed through an etching method, and the photodetector (PD) 102 is arranged as a photodetector monitoring laser beams 110 from the surface while being opposed to the surface 105. Here, the light receiving surface 106 of the PD takes convex shape toward the so-called BH-LD 101 so that the distance between the light receiving surface and the laser resonator surface is made the shortest near the laser resonant axis. Accordingly, the combination of BH-LD and PD results in the extremely small generation of reflecting noises. The efficiency of light reception is improved as compared to the light receiving surface of a plane because the convex light receiving surface 106 of the PD 102 focuses laser beams 110 and couples them with the PD 102 by its lens action.
公开日期	1983-05-20
申请日期	1981-11-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/62837]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO,KOBAYASHI ISAO,SUGIMOTO SHIGETOKI. Semiconductor laser-photodetector beam integrate element. JP1983084486A. 1983-05-20.

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